Prof., Technical University of Budapest
János Mizsei was born in Jaszladany, Hungary, in 1952. He received his diploma in electrical engineering (1976), „Dr. Techn.” degree (1979), „PhD” (1995) from the Technical University of Budapest, the „candidate for techn. Science” (1987) and the „doctor of science” degree (2003) from the Hungarian Academy of Sciences. He has worked at the Department of Electron Devices of the Technical University of Budapest since 1977. He had a sabbatical year at the Enterprise for Microelecronics, Budapest. His main subjects of interests are semiconductor technology (investigation and education), electron devices included solar cells, surface physics of semiconductors and semiconductor gas sensors.
Recent activities are related with work function measurements on solid surfaces by vibrating capacitor (Kelvin) method for investigating surface potentials of catalitically activated semiconductor gas sensors, the energy gap of the high Tc superconductors, light induced surface potential transients on ultrathin (tunnel) oxide covered Si surfaces and porous Si layers, developing the scanning version of the vibrating capacitor method for generating olfactory images from the surface potentials, surface mapping of silicon wafers, nanocrystallines produced by agglomeration of ultrathin metal layers for activating semiconductor sensors, other scanning methods for surface mapping.